Chih-Chao Yang, B. Li, et al.
IEEE Electron Device Letters
Paper
VALUE D0Z* for GRAIN BOUNDARY ELECTROMIGRATION in ALUMINUM FILMS
Abstract
A value of the constant D0Z* for grain boundary electromigration in alluminum thin films is determined to be 3(± 0.5) × 10-2. Generalized curves are provided for (v̄i/j)T against T-1 for aluminum films. These curves can be used to obtain appropriate ionic velocities at any temperature or current density for films of known grain size. © 1970 The American Institute of Physics.
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