PaperA photoluminescence study of CF4 reactive-ion-etched silicon: Various process conditions and magnetically enhanced etchingA. Henry, B. Monemar, et al.Journal of Applied Physics
PaperOptical characterization of deep O implants in GaAsB. Monemar, J.M. BlumJournal of Applied Physics
PaperDetection and origins of crystal defects in GaAs/GaAlAs LPE layersG.R. Woolhouse, A.E. Blakeslee, et al.Journal of Applied Physics
PaperThreshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?B. Monemar, R.M. Potemski, et al.Physical Review Letters
