R.E. Viturrc, C. Mailhiot, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The effects of optically generated minority-carrier current on the etching behavior of n-type GaAs in 1-M KOH aqueous solution were studied. It was observed that the etch rate depends on the minority-carrier current flow through the interface, which is controlled by the bias voltage. The etch rate is considerably reduced under open-circuit conditions as compared to short-circuit conditions. This effect simulates a self-limiting photoetching process for the thickness trimming of thin films, which is necessary for several device applications.
R.E. Viturrc, C. Mailhiot, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.J. Matyi, M.R. Melloch, et al.
Applied Physics Letters
C.M. Ransom, T.O. Sedgwick, et al.
ECS Meeting 1983
M.R. Melloch, N. Otsuka, et al.
Journal of Applied Physics