Junfeng Guan, Arun Paidimarri, et al.
IEEE T-MTT
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
Junfeng Guan, Arun Paidimarri, et al.
IEEE T-MTT
Damon B. Farmer, Yu-Ming Lin, et al.
Applied Physics Letters
Fengnian Xia, Thomas Mueller, et al.
PHOTINICS 2010
Guanxiong Liu, Yanqing Wu, et al.
ACS Nano