Y.J. van der Meulen, C.M. Osburn, et al.
JES
We have investigated the x rays produced when ion beams of B+, P+, and As+ are implanted into silicon over the ion energy range 20-2800 keV. The production of Si(L) x rays at 134 Å is very intense. These low-energy x rays are found to be very useful as a dose monitor when charge integration is not feasible; for example, for very low doses (<1012/cm2) and for neutral beam implantation (for currents above 2 mA).
Y.J. van der Meulen, C.M. Osburn, et al.
JES
J.F. Ziegler, W.K. Chu
Thin Solid Films
M.J. Nass, A. Lurio, et al.
Nuclear Instruments and Methods
A. Lurio, W. Reuter
Journal of Physics D: Applied Physics