Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002
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14 results for Tak H. Ning
SPT CELL - A NEW SUBSTRATE - PLATE TRENCH CELL FOR DRAMS.
- N.C.-C. Lu
- P.E. Cottrell
- et al.
- 1984
- IEDM 1984
Hot-Electron Emission in N-Channel IGFET's
- Tak H. Ning
- Ronald R. Troutman
- 1979
- IEEE JSSC
Enabling RFCMOS solutions for emerging advanced applications
- John J. Pekarik
- Douglas D. Coolbaugh
- et al.
- 2005
- GAAS 2005
RFCMOS technology from 0.25μm to 65nm: The state of the art
- J.J. Pekarik
- D.R. Greenberg
- et al.
- 2004
- CICC 2004
Model-based guidelines to suppress cable discharge event (CDE) induced latchup in CMOS ICs
- K. Chatty
- P.E. Cottrell
- et al.
- 2004
- IRPS 2004
Model-based guidelines to suppress cable discharge event (CDE) induced latchup in CMOS ICs
- K. Chatty
- P.E. Cottrell
- et al.
- 2004
- IRPS 2004
Enhanced multi-threshold (MTCMOS) circuits using variable well bias
- S.V. Kosonocky
- M.J. Immediato
- et al.
- 2001
- ISLPED 2001
Low-power CMOS at Vdd=4kT/q
- A. Bryant
- J. Brown
- et al.
- 2001
- DRC 2001
SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications
- Jae-Sung Rieh
- Basanth Jagannathan
- et al.
- 2004
- IEEE T-MTT