The influence of photoacid structure on the design and performance of 193-nm resists
- Robert D. Allen
- Juliann Opitz
- et al.
- 1997
- J. Photopolym. Sci. Tech.
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54 results for Donald C. Hofer
Correlation of UVIIHS resist chemistry to dissolution rate measurements
- J. Thackeray
- T.H. Fedynyshyn
- et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Lithographic feasibility of escap beyond quarter micron
- Hiroshi Ito
- Greg Breyta
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Progress in 193 nm positive resists
- R.D. Allen
- R. Soortyakumaran
- et al.
- 1996
- J. Photopolym. Sci. Tech.
193 nm photoresist r&d: the risk & challenge
- Donald C. Hofer
- Robert Allen
- et al.
- 1996
- J. Photopolym. Sci. Tech.
Thick film positive photoresist: development and resolution enhancement technique
- D.R. McKean
- T.P. Russell
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization
- Hiroshi Ito
- G. Breyta
- et al.
- 1995
- Microlithography 1995
193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system
- R.D. Allen
- G.M. Wallraff
- et al.
- 1995
- Microlithography 1995
Resolution and etch resistance of a family of 193 nm positive resists
- R.D. Allen
- I.Y. Wan
- et al.
- 1995
- J. Photopolym. Sci. Tech.
Optimization of ESCAP photoresist for x-ray lithography
- A.T.S. Pomerene
- K.E. Petrillo
- et al.
- 1994
- Microlithography 1994