Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon
- T.Y. Tan
- U. Gösele
- 1982
- Applied Physics Letters
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18 results for U. Gösele
Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"
- U. Gösele
- K.N. Tu
- 1982
- Journal of Applied Physics
A simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couples
- U. Gösele
- K.N. Tu
- et al.
- 1982
- Journal of Applied Physics
Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound
- T.Y. Tan
- U. Gösele
- 1982
- Journal of Applied Physics
Oxygen diffusion and thermal donor formation in silicon
- U. Gösele
- T.Y. Tan
- 1982
- Applied Physics A Solids and Surfaces
Growth kinetics of oxidation-induced stacking faults in silicon: A new concept
- T.Y. Tan
- U. Gösele
- 1981
- Applied Physics Letters
Diffusion of zinc in gallium arsenide: A new model
- U. Gösele
- F.F. Morehead
- 1981
- Journal of Applied Physics
Diffusion of gold in silicon: A new model
- U. Gösele
- F.F. Morehead
- et al.
- 1981
- Applied Physics Letters