56 nm pitch copper dual-damascene interconnects with triple pitch split metal and double pitch split via
- James Hsueh-Chung Chen
- Christopher Waskiewicz
- et al.
- 2012
- IITC 2012
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81 results for Donald Canaperi
Post Cu CMP cleaning process evaluation for 32nm and 22nm technology nodes
- Wei-Tsu Tseng
- Donald Canaperi
- et al.
- 2012
- ASMC 2012
Formation mechanism and suppression methods of copper dendrites in BEOL integration
- Shaoning Yao
- Wei-Tsu Tseng
- et al.
- 2011
- ADMETA 2011
64 nm pitch Cu dual-damascene interconnects using pitch split double exposure patterning scheme
- Shyng-Tsong Chen
- Hideyuki Tomizawa
- et al.
- 2011
- IITC/MAM 2011
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Reducing time dependent line to line leakage following post CMP clean
- Donald F. Canaperi
- Satyavolu S. Papa Rao
- et al.
- 2010
- MRS Online Proceedings Library
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009