Monte-Carlo simulations of performance scaling in strained-Si nMOSFETs
- Arvind Kumar
- Massimo V. Fischetti
- et al.
- 2005
- SISPAD 2005
Publications
Date
Featured collections
Popular topics
102 results for Massimo V. Fischetti
Band-structure and quantum effects on hole transport in p-MOSFETs
- Santhosh Krishnan
- Dragica Vasileska
- et al.
- 2005
- Journal of Computational Electronics
Hole transport in p-channel Si MOSFETs
- Santhosh Krishnan
- Dragica Vasileska
- et al.
- 2005
- Microelectronics Journal
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and to mainstream VLSI technology
- Massimo V. Fischetti
- Steven E. Laux
- et al.
- 2004
- IWCE 2004
Thirty years of Monte Carlo simulations of electronic transport in semiconductors: Their relevance to science and mainstream VLSI technology
- M.V. Fischetti
- S.E. Laux
- et al.
- 2004
- Journal of Computational Electronics
Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects
- S.E. Laux
- A. Kumar
- et al.
- 2004
- Journal of Applied Physics
Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate
- F. Gámiz
- M.V. Fischetti
- 2003
- Applied Physics Letters
Scaling MOSFETs to the Limit: A Physicists's Perspective
- M.V. Fischetti
- 2003
- Journal of Computational Electronics
Does Circulation in Individual Current States Survive in the Total Current Density?
- S.E. Laux
- A. Kumar
- et al.
- 2003
- Journal of Computational Electronics
Inversion channel mobility in high-κ high performance MOSFETs
- Z. Ren
- M.V. Fischetti
- et al.
- 2003
- IEDM 2003