FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields
- R.B. Dunford
- R. Newbury
- et al.
- 1995
- Solid State Communications
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138 results for B.S. Meyerson
Extremely high electron mobility in Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
High hole mobility in SiGe alloys for device applications
- K. Ismail
- J.O. Chu
- et al.
- 1994
- Applied Physics Letters
UHVCVD growth of Si/SiGe heterostructures and their applications
- B.S. Meyerson
- K. Ismail
- et al.
- 1994
- Semiconductor Science and Technology
Shubnikov-de Haas oscillations under hot-electron conditions in Si/Si1-xGex heterostructures
- G. Stöger
- G. Brunthaler
- et al.
- 1994
- Physical Review B
Modulation-doped n-type Si/SiGe with inverted interface
- K. Ismail
- J.O. Chu
- et al.
- 1994
- Applied Physics Letters
SiGe-Channel Heterojunction p-MOSFET’s
- Sophie Verdonckt-Vandebroek
- Bernard S. Meyerson
- et al.
- 1994
- IEEE Transactions on Electron Devices
Room-temperature electron mobility in strained Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
Systematics of electron mobility in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1993
- Applied Physics Letters
Spatially resolved Raman spectroscopy of a step graded Ge xSi1-x strain relief structure
- J.C. Tsang
- F.H. Dacol
- et al.
- 1993
- Applied Physics Letters