A 1.2 ns/1 ns 1 K∗16 ECL dual-port cache RAM
- Hyun J. Shin
- P.F. Lu
- et al.
- 1993
- ISSCC 1993
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26 results for L.F. Wagner
A 5Gb/s 16×16 Si-bipolar crosspoint switch
- Hyun Shin
- James Warnock
- et al.
- 1992
- ISSCC 1992
A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
Sub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
Performance degradation due to extrinsic base encroachment in advanced narrow-emitter bipolar circuits
- C.T. Chuang
- 1988
- IEDM 1988
ON THE IMPURITY PROFILES OF DOWN SCALED BIPOLAR TRANSISTORS.
- D.D. Tang
- G.P. Li
- et al.
- 1985
- IEDM 1985
High performance complementary bipolar technology
- J. Warnock
- J.D. Cressler
- et al.
- 1993
- VLSI Technology 1993
INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- C.T. Chuang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
EFFECTS OF MeV IMPLANTATION ON THE CHARACTERISTICS OF p-n JUNCTIONS.
- L.K. Wang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED