EFFECTS OF MeV IMPLANTATION ON THE CHARACTERISTICS OF p-n JUNCTIONS.
- L.K. Wang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
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26 results for L.F. Wagner
INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- C.T. Chuang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
A Schottky-Barrier Diode With Self-Aligned Floating Guard Ring
- C.T. Chuang
- Maurizio Arienzo
- et al.
- 1984
- IEEE T-ED
IVB-4 Probing the Minority-Carrier Quasi-Fermi Level in Epitaxial Schottky-Barrier Diodes
- L.F. Wagner
- 1984
- IEEE T-ED
On the Minority Charge Storage for an Epitaxial Schottky-Barrier Diode
- C.T. Chuang
- 1983
- IEEE T-ED
On the Current-Voltage Characteristics of n+-p-p+ Diodes
- C.T. Chuang
- 1983
- IEEE T-ED