A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Publications
Date
Featured collections
Popular topics
20 results for F.J. Hohn
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
Fully-scaled 0.25-micron bipolar technology using variable shaped electron-beam lithography
- Philip J. Coane
- Kaolin G. Chiong
- et al.
- 1993
- Microlithography 1993
Resist patterning for sub-quarter-micrometer device fabrications (Invited Paper)
- K. Chiong
- F.J. Hohn
- 1990
- Microlithography 1990
Electron beam lithography, directions in direct write and mask making
- F.J. Hohn
- 1990
- Microlithography 1990
Fully scaled 0.5 micron CMOS technology using variable shaped electron beam lithography
- Philip Coane
- Paul Rudeck
- et al.
- 1989
- Proceedings of SPIE 1989
Contrast and sensitivity trade-offs of resist processing in electron beam lithography at 0.5µm and below
- W. Molzen
- Michael G. Rosenfield
- et al.
- 1989
- Proceedings of SPIE 1989
Review of e-beam electrical test techniques
- Fritz J. Hohn
- 1989
- Proceedings of SPIE 1989
0. 5 MICRON GATE CMOS TECHNOLOGY USING E-BEAM/OPTICAL MIX LITHOGRAPHY.
- L.K. Wang
- Y. Taur
- et al.
- 1985
- VLSI Technology 1985
Electron beam testing and its application to packaging modules for very large scale integrated (vlsi) chip arrays
- F.J. Hohn
- T.H.P. Chang
- et al.
- 1989
- Proceedings of SPIE 1989