On the effects of implantation of ions in the MeV energy range into silicon
- L.K. Wang
- C.T. Chuang
- et al.
- 1986
- Solid-State Electronics
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33 results for G.P. Li
IVB-1 Tunneling Component in Polysilicon Self-Aligned Bipolar Transistors
- E. Hackbarth
- G.P. Li
- et al.
- 1986
- IEEE T-ED
Increasing the Current Driving Capability of Epitaxial Schottky-Barrier Diodes Using High-Energy Implantation
- C.T. Chuang
- G.P. Li
- et al.
- 1985
- IEEE T-ED