SOI for a 1-Volt CMOS Technology and Application to a 512kb SRAM with 3.5 ns Access Time
- G. Shahidi
- T.H. Ning
- et al.
- 1993
- IEDM 1993
Publications
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21 results for Michael R. Polcari
High Performance 0.1 μm CMOS Devices with 1.5 V Power Supply
- Y. Taur
- S.J. Wind
- et al.
- 1993
- IEDM 1993
A novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Sub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
REACTIVE ION ETCHING OF MULTI-LAYER RESIST.
- H.Y. Ng
- D.P. Klaus
- et al.
- 1986
- MRS Fall Meeting 1986
HIGHLY LATCHUP-IMMUNE 1- mu m CMOS TECHNOLOGY FABRICATED WITH 1 Mev ION IMPLANTATION AND SELF-ALIGNED TiSi//2.
- F.S. Lai
- L.K. Wang
- et al.
- 1984
- IEDM 1984
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- Y. Mii
- S. Rishton
- et al.
- 1994
- IEEE Electron Device Letters
Design and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993