Complementary p- and n-channel quantum-well MI3SFET's
- R.A. Kiehl
- M.A. Olson
- et al.
- 1988
- IEDM 1988
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15 results for Richard A. Kiehl
High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- Richard A. Kiehl
- P.E. Hallali
- et al.
- 1991
- IEEE Electron Device Letters
p-Channel FET Based on p/n Double-Quantum-Well Heterostructure
- Richard A. Kiehl
- Steven L. Wright
- et al.
- 1989
- IEEE Electron Device Letters
p-Channel Quantum-Well Heterostructure MI3 SFET
- Richard A. Kiehl
- Sandip Tiwari
- et al.
- 1988
- IEEE Electron Device Letters
Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts
- Sandip Tiwari
- Alyce Ginzberg
- et al.
- 1988
- IEEE Electron Device Letters
Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
- R.A. Kiehl
- P.E. Batson
- et al.
- 1993
- Physical Review B
Observation of valence-band Landau-level mixing by resonant magnetotunneling
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1993
- Physical Review B
Theoretical hole mobility in a narrow Si/SiGe quantum well
- B. Laikhtman
- R.A. Kiehl
- 1993
- Physical Review B
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
- D.A. Grützmacher
- T.O. Sedgwick
- et al.
- 1993
- Journal of Electronic Materials
Saturation transconductance of deep-submicron-channel MOSFETs
- Y. Taur
- C.-H. Hsu
- et al.
- 1993
- Solid State Electronics