A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
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7 results for R.A. DellaGuardia
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
- T. Dalton
- N. Fuller
- et al.
- 2004
- IITC 2004
Methods for comparing contact hole shrinking techniques with 248 nm single layer and bilayer photoresists
- Karen Petrillo
- John Simons
- et al.
- 2002
- Microlithography 2002
Opportunities and challenges in ultra low k dielectrics for interconnect applications
- S. Purushothaman
- S.V. Nitta
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
A new positive DUV photoresist optimized for 0.25 μm isolated lines
- T. Lindsay
- G.G. Barclay
- et al.
- 1997
- Microelectronic Engineering
Determination of Helium presence in the mask/wafer gap of X-ray lithography steppers
- Juan R. Maldonado
- Ron DellaGuardia
- et al.
- 1995
- Microelectronic Engineering
X-ray transmission through low atomic number particles
- R.A. DellaGuardia
- David Seeger
- et al.
- 1989
- Microelectronic Engineering