Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures: I. Very Low Pressure Deposition
- James H. Comfort
- Rafael Reif
- 2019
- JES
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Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures: II. Plasma Enhanced Deposition
- James H. Comfort
- Rafael Reif
- 2019
- JES
Phase edge lithography for sub 0.1 μm electrical channel length in a 200 MM full CMOS process
- P. Agnello
- T. Newman
- et al.
- 1995
- VLSI Technology 1995
Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
CMOS scaling in the 0.1-μm, 1.X-volt regime for high-performance applications
- G. Shahidi
- J. Warnock
- et al.
- 1995
- IBM J. Res. Dev
An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Electron Device Letters
A Room Temperature 0.1 µm CMOS on SOI
- Ghavam G. Shahidi
- Carl A. Anderson
- et al.
- 1994
- IEEE Transactions on Electron Devices
A Novel Borderless Contact/Interconnect Technology Using Aluminum Oxide Etch Stop for High Performance SRAM and Logic
- S. Subbanna
- D.L. Harame
- et al.
- 1993
- IEDM 1993
SOI for a 1-Volt CMOS Technology and Application to a 512kb SRAM with 3.5 ns Access Time
- G. Shahidi
- T.H. Ning
- et al.
- 1993
- IEDM 1993