Low thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Publications
47 results for James H. Comfort
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition
- S. Stiffler
- J.H. Comfort
- et al.
- 1991
- Journal of Applied Physics
Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- ESSDERC 1991
Advanced bipolar technology for the 1990s
- J.Y.-C. Sun
- J.H. Comfort
- et al.
- 1991
- VLSI-TSA 1991
Novel In-Situ Doped Polysilicon Emitter Process with Buried Diffusion Source (Bds)
- Joachim N. Burghartz
- Andrew C. Megdanis
- et al.
- 1991
- IEEE Electron Device Letters
Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors
- John D. Cressler
- James H. Comfort
- et al.
- 1991
- IEEE Electron Device Letters
Device design issues for a high-performance technology with Si or SiGe epitaxial base
- J.N. Burghartz
- J.D. Cressler
- et al.
- 1991
- Microelectronic Engineering
A 26 ps self-aligned epitaxial silicon base bipolar technology
- J.H. Comfort
- P.F. Lu
- et al.
- 1990
- VLSI Technology 1990
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990