Tunable WDM add/drop components in silicon-oxynitride waveguide technology
- B.J. Offrein
- F. Horst
- et al.
- 1999
- ECTC 1999
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59 results for R. Germann
Compact 1-to-8, double 1-to-4 or fourfold 1-to-2 space switch based on beam steering by a waveguide array
- F. Horst
- E. Fluck
- et al.
- 1999
- ECTC 1999
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
Guéret, Blanc, Germann, and Rothuizen reply [1]
- Pierre Guéret
- Nicolas Blanc
- et al.
- 1992
- Physical Review Letters
Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructures
- P. Guéret
- N. Blanc
- et al.
- 1992
- Physical Review Letters
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006