H plasma cleaning and a-Si passivation of GaAs for surface channel device applications
- C. Marchiori
- D.J. Webb
- et al.
- 2009
- Journal of Applied Physics
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59 results for R. Germann
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
Optical properties of epitaxial SrHf O3 thin films grown on Si
- M. Sousa
- C. Rossel
- et al.
- 2007
- Journal of Applied Physics
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
SrHfO3 as gate dielectric for future CMOS technology
- C. Rossel
- M. Sousa
- et al.
- 2007
- Microelectronic Engineering
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters