Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs
- H. Baratte
- D.K. Sadana
- et al.
- 1990
- Journal of Applied Physics
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15 results for M. Norcott
Effect of F co-implant during annealing of Be-implanted GaAs
- P.E. Hallali
- H. Baratte
- et al.
- 1990
- Applied Physics Letters
Thermally stable ohmic contacts to n-type GaAs. VIII. Sputter-deposited InAs contacts
- H.-J. Kim
- Masanori Murakami
- et al.
- 1990
- Journal of Applied Physics
Thermally stable ohmic contacts to n-type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts
- Masanori Murakami
- W.H. Price
- et al.
- 1990
- Journal of Applied Physics
Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W
- R.V. Joshi
- V. Prasad
- et al.
- 1990
- Journal of Applied Physics