Epitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall Reactor
- T.F. Kuech
- M.A. Tischler
- et al.
- 2019
- JES
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14 results for N.I. Buchan
Vapor Pressure and Vapor Composition of Diethylgallium Chloride and Diethylaluminum Chloride
- Nicholas I. Buchan
- Robert M. Potemski
- et al.
- 2002
- Journal of Chemical and Engineering Data
The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
- T. Kobayashi
- H. Kojima
- et al.
- 1995
- Journal of Physics and Chemistry of Solids
β-Hydride elimination reaction of triethylgallium on GaAs(100) surfaces
- Nicholas I. Buchan
- Ming L. Yu
- 1993
- Surface Science
Lateral down-scaling of selective area MOVPE-grown GaInAs/InP wires and dots
- H. Rothuizen
- P. Roentgen
- et al.
- 1993
- Microelectronic Engineering
(A1)GaInP Laser with Lateral Confinement by Epitaxial Growth on Nonplanar Substrates
- Gian-Luca Bona
- Peter Unger
- et al.
- 1993
- IEEE Photonics Technology Letters
Compositional variation and ordering of GaxIn1-xP on GaAs structured substrates
- N.I. Buchan
- A. Jakubowicz
- et al.
- 1992
- Applied Physics Letters
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
- T.J. De Lyon
- N.I. Buchan
- et al.
- 1991
- Applied Physics Letters
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3
- N.I. Buchan
- T.F. Kuech
- et al.
- 1991
- Journal of Crystal Growth