Electrical characteristics and reliability of sub-3 nm gate oxides grown on nitrogen implanted silicon substrates
- L.K. Han
- S.W. Crowder
- et al.
- 1997
- IEDM 1997
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58 results for E.F. Crabbé
Asymmetry in effective-channel length of n- and p-MOSFETs
- L.R. Logan
- Y. Taur
- et al.
- 1997
- SISPAD 1997
NBTI-Channel Hot Carrier effects in pMOSFETs in advanced CMOS technologies
- G. La Rosa
- F. Guarin
- et al.
- 1997
- IRPS 1997
A silicon nanocrystals based memory
- Sandip Tiwari
- Farhan Rana
- et al.
- 1996
- Applied Physics Letters
High-performance 0.08 μm CMOS
- L. Su
- S. Subbanna
- et al.
- 1996
- VLSI Technology 1996
Phase edge lithography for sub 0.1 μm electrical channel length in a 200 MM full CMOS process
- P. Agnello
- T. Newman
- et al.
- 1995
- VLSI Technology 1995
Understanding hot-electron transport in silicon devices: Is there a shortcut?
- M.V. Fischetti
- S.E. Laux
- et al.
- 1995
- Journal of Applied Physics
Si/SiGe Epitaxial-Base Transistors—Part II: Process Integration and Analog Applications
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Si/SiGe Epitaxial-Base Transistors—Part I: Materials, Physics, and Circuits
- D.L. Harame
- J.H. Comfort
- et al.
- 1995
- IEEE Transactions on Electron Devices
Novel capacitor-less high density low power vertical memory
- S. Tiwari
- H.I. Hanafi
- et al.
- 1994
- DRC 1994