M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A fundamental asymmetry is shown to be present in the effective-channel lengths of n-FET and p-FET devices. Basic differences in electron and hole transport give rise to a larger Leff for n-FETs. This can also be observed through a comparison of the device sheet resistance where the relative difference in channel to source/drain mobility leads to distinct sheet rho patterns near the metallurgical junction.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Y. Taur, S. Cohen, et al.
IEDM 1992
J.H. Comfort, G.L. Patton, et al.
IEDM 1990
Y. Taur, S.J. Wind, et al.
IEDM 1993