Publications

58 results for E.F. Crabbé

IIA-3 113-GHz f_T Graded-Base SiGe HBT's
- - E.F. Crabbé
  - B.S. Meyerson
  - et al.
- 1993
- IEEE Transactions on Electron Devices
Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- - Enrico Zanoni
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Electron Device Letters
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part I: Transistor DC Design Considerations
- - John D. Cressler
  - James H. Comfort
  - et al.
- 1993
- IEEE Transactions on Electron Devices
On the Profile Design and Optimization of Epitaxial Si and SiGe-Base Bipolar Technology for 77 K Applications—Part II: Circuit Performance Issues
- - John D. Cressler
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Transactions on Electron Devices
A high performance epitaxial SiGe-base ECL BiCMOS technology
- - D.L. Harame
  - E.F. Crabbe
  - et al.
- 1992
- IEDM 1992
Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- - E. Zanoni
  - E.F. Crabbe
  - et al.
- 1992
- IEDM 1992
SiGe heterojunctions: Devices and applications
- - Maurizio Arienzo
  - James H. Comfort
  - et al.
- 1992
- ESSDERC 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- - J.N. Burghartz
  - J. Wamock
  - et al.
- 1992
- ESSDERC 1992
An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature
- - John D. Cresslcr
  - James H. Comfort
  - et al.
- 1992
- VLSI Technology 1992
IIA-4 Low-Temperature Operation of SiGe p-n-p HBT's
- - E.F. Crabbé
  - D.L. Harame
  - et al.
- 1992
- IEEE T-ED