Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
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23 results for T. Dalton
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
Analysis of plasma-induced modification of ULK and eULK Materials: Dual damascene processing challenges for 45nm (κ ≤ 2.4) and beyond BEOL technologies
- N. Fuller
- M.A. Worsley
- et al.
- 2006
- IITC 2006
Non-poisoning dual damascene patterning scheme for low-k and ultra low-k BEOL
- W. Cote
- D. Edelstein
- et al.
- 2006
- ADMETA 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Extendibility of PVD barrier/seed for BEOL Cu metallization
- C.-C. Yang
- D. Edelstein
- et al.
- 2005
- IITC 2005
Plasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- N. Fuller
- M.A. Worsley
- et al.
- 2005
- ISTC 2005
Electrical and reliability evaluation of Cu/Low-k integration: Exploration of PVD barrier/seed and CVD SiC(N,H) cap depositions
- C.-C. Yang
- D. Edelstein
- et al.
- 2004
- ADMETA 2004
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004