Plasma ash processing solutions for advanced interconnect technology
- N. Fuller
- M.A. Worsley
- et al.
- 2008
- Thin Solid Films
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23 results for T. Dalton
Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials
- M.A. Worsley
- S. Bent
- et al.
- 2007
- Journal of Applied Physics
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Non-poisoning dual damascene patterning scheme for low-k and ultra low-k BEOL
- W. Cote
- D. Edelstein
- et al.
- 2006
- ADMETA 2006
Analysis of plasma-induced modification of ULK and eULK Materials: Dual damascene processing challenges for 45nm (κ ≤ 2.4) and beyond BEOL technologies
- N. Fuller
- M.A. Worsley
- et al.
- 2006
- IITC 2006
Characterization of neutral species densities in dual frequency capacitively coupled photoresist ash plasmas by optical emission actinometry
- M.A. Worsley
- S. Bent
- et al.
- 2006
- Journal of Applied Physics
Extendibility of PVD barrier/seed for BEOL Cu metallization
- C.-C. Yang
- D. Edelstein
- et al.
- 2005
- IITC 2005
Plasma induced dielectric modification: Etching challenges for 65nm and beyond technology nodes
- N. Fuller
- M.A. Worsley
- et al.
- 2005
- ISTC 2005
Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature
- Marcus A. Worsley
- Stacey F. Bent
- et al.
- 2005
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004