Extreme scaling with ultra-thin Si channel MOSFETs
- Bruce Doris
- Meikei Ieong
- et al.
- 2002
- IEDM 2002
Publications
Date
Featured collections
Popular topics
90 results for Meikei Ieong
A functional FinFET-DGCMOS SRAM cell
- E. Nowak
- B. Rainey
- et al.
- 2002
- IEDM 2002
Examination of hole mobility in ultra-thin body SOI MOSFETs
- Zhibin Ren
- Paul M. Solomon
- et al.
- 2002
- IEDM 2002
Sub-60 nm physical gate length SOI CMOS
- I.Y. Yang
- K. Chen
- et al.
- 1999
- IEDM 1999
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
- H. Nayfeh
- D. Singh
- et al.
- 2006
- IEEE Electron Device Letters
Strained ultrahigh performance fully depleted nMOSFETs with ft of 330 GHz and sub-30-nm gate lengths
- D. Singh
- Keith A. Jenkins
- et al.
- 2006
- IEEE Electron Device Letters
Silicon device scaling to the sub-10-nm regime
- Meikei Ieong
- Bruce Doris
- et al.
- 2004
- Science
Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
High performance transistors featured in an aggressively scaled 45nm bulk CMOS technology
- Z. Luo
- N. Rovedo
- et al.
- 2007
- VLSI Technology 2007