Systematic characterization of pseudomorphic (110) intrinsic SiGe epitaxial films for hybrid orientation technology with embedded SiGe source/drain

PFETs with embedded SiGe source/drain on HOT substrates have shown significant performance improvement compared to PFETs with embedded SiGe on (100) SOI substrates. In this paper, we report a systematic material characterization on the epitaxial SiGe films, both blanket and patterned, on (110) and (100) substrates, using an array of methods such as XRD AES, UV Raman, AFM, and TEM, and corresponding PFETs performance data. © 2006 Materials Research Society.