Effects of environment on modulus of low-k porous films used in back end of line
- Eva E. Simonyi
- Christos D. Dimitrakopoulos
- et al.
- 2007
- MRS Spring Meeting 2007
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9 results for M. Lane
Application of nanoindentation to characterize fracture in ILD films used in the BEOL
- Eva E. Simonyi
- E. Liniger
- et al.
- 2005
- MRS Spring Meeting 2005
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration scheme
- S.V. Nitta
- S. Purushothaman
- et al.
- 2004
- IEDM 2004
A multilevel copper/low-k/airgap BEOL technology
- S.V. Nitta
- S. Ponoth
- et al.
- 2007
- ADMETA 2007
Enhanced cracking resistance of plasma deposited low k SiCOH films with nano imbedded layers
- Son Nguyen
- Eric Liniger
- et al.
- 2007
- ECS Meeting 2007
A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
Chip-to-Package Interaction for a 90 nm Cu / PECVD Low-k technology
- W. Landers
- D. Edelstein
- et al.
- 2004
- IITC 2004
90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004
Reliability challenges with ultra-low k interlevel dielectrics
- J.R. Lloyd
- M. Lane
- et al.
- 2004
- Microelectronics Reliability