Enhanced cracking resistance of plasma deposited low k SiCOH films with nano imbedded layers

With the simple insertion of imbedded nano layer during the deposition of plasma deposited porous low k SiCOH film, the cracking resistance of the hick ILD film can be improved significantly without changing modulus and hardness properties. The reduction in cracking will help to facilitate the implementation of thick ILD in Cu/Low k ILD for advanced BEOL ©The Electrochemical Society.