Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
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21 results for Haizhou Yin
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
CMOS fabricated by hybrid-orientation technology (HOT)
- Bin Yang
- M. Yang
- et al.
- 2007
- IEDST 2007
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution: Wafer fabrication technique and device applications
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- ECS Meeting 2007
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
An examination of facet formation during solid phase epitaxy of line-shaped amorphized regions in (001) and (011) Si
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
Mask-edge defects in hybrid orientation direct-Si-bonded substrates recrystallized by solid phase epitaxy after patterned amorphization
- K.L. Saenger
- K.E. Fogel
- et al.
- 2007
- Journal of Applied Physics
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- Journal of Applied Physics
Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2005
- Applied Physics Letters