High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012
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8 results for G. Pfeiffer
Direct silicon bonded (DSB) substrate solid phase epitaxy (SPE) integration scheme study for high performance bulk CMOS
- Haizhou Yin
- C.Y. Sung
- et al.
- 2006
- IEDM 2006
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- ICSICT 2006
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substrates
- Haizhou Yin
- Z. Ren
- et al.
- 2006
- VLSI Technology 2006
An overview of 300mm SOI starting wafer quality and its yield detractors
- Pei Y. Tsai
- Marlene Almonte
- et al.
- 2005
- ISTFA 2005