High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005
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6 results for B.H. Lee
Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates
- Sufi Zafar
- Byoung H. Lee
- et al.
- 2004
- IEEE Electron Device Letters
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
A model for negative bias temperature instability (NBTI) in oxide and high κ pFETs
- Sufi Zafar
- Byoung H. Lee
- et al.
- 2004
- VLSI Technology 2004
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics
- P.D. Kirsch
- M.A. Quevedo-Lopez
- et al.
- 2006
- Applied Physics Letters