Spacer defined double patterning for sub-72 nm pitch logic technology
- Ryoung-Han Kim
- Erin McLellan
- et al.
- 2010
- SPIE Advanced Lithography 2010
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55 results for John Arnold
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008
Porous low-k material etch for 32 nm and beyond
- Catherine Labelle
- John Arnold
- et al.
- 2008
- ADMETA 2008
The effect of material and process interactions on BEOL integration
- T. Spooner
- J.C. Arnold
- et al.
- 2009
- ECS Meeting 2009
Overcoming the challenges of 22-nm node patterning through litho-design co-optimization
- Martin Burkharde
- J.C. Arnold
- et al.
- 2009
- SPIE Advanced Lithography 2009
Graded spin-on organic bottom antireflective coating for high NA lithography
- Dario L. Goldfarb
- Sean D. Burns
- et al.
- 2008
- SPIE Advanced Lithography 2008
DC and RF characterization of sub-100-nm-gate-length strained Ge-on-insulator p-MOSFETs
- S.W. Bedell
- A. Majumdar
- et al.
- 2008
- DRC 2008
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Graded spin-on organic bottom antireflective coating for high na immersion lithography
- Dario L. Goldfarb
- Libor Vyklicky
- et al.
- 2008
- J. Photopolym. Sci. Tech.
Defect detection strategies and process partitioning for single-expose EUV patterning
- Luciana Meli
- Karen Petrillo
- et al.
- 2019
- J. Micro/Nanolithogr. MEMS MOEMS