E. Todd Ryan, Jeremy Martin, et al.
JES
The resistance to plasma-induced damage of various nanoporous, ultra low- κ porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of Si- CH3 and Si (CH3) 2 bonding exhibited less plasma damage than similar films with lower carbon content. © 2008 American Institute of Physics.
E. Todd Ryan, Jeremy Martin, et al.
JES
Marcus A. Worsley, Stacey F. Bent, et al.
MRS Proceedings 2003
Conal E. Murray, Paul R. Besser, et al.
Applied Physics Letters
Arpan P. Mahorowala, Katherina Babich, et al.
Proceedings of SPIE - The International Society for Optical Engineering