SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
Publications
Date
Featured collections
Popular topics
5 results for A. Chinthakindi
A 4.2-ps ECL ring-oscillator in a 285-GHz f MAX SiGe technology
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2002
- IEEE Electron Device Letters
RFCMOS technology from 0.25μm to 65nm: The state of the art
- J.J. Pekarik
- D.R. Greenberg
- et al.
- 2004
- CICC 2004
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
Simultaneous fabrication of RF MEMS switches and resonators using copper-based CMOS interconnect manufacturing methods
- C.V. Jahnes
- J.M. Cotte
- et al.
- 2004
- MEMS 2004