SiGe HBT technology with f _max/f _T = 350/300 GHz and gate delay below 3.3 ps

This work reports on SiGe HBT technology withf max and f T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f max and f T both of which exhibit 300 GHz and above. Associated BV CEO and BV CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f max and f T values are also discussed. © 2004 IEEE.