Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters
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3 results for J. Florkey
RFCMOS technology from 0.25μm to 65nm: The state of the art
- J.J. Pekarik
- D.R. Greenberg
- et al.
- 2004
- CICC 2004
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004