FinFET performance advantage at 22nm: An AC perspective
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and an f MAX extrapolated from Mason's unilateral gain of 285 GHz. f MAX extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12 × 2.5 μm 2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm 2). Smaller transistors (0.12 × 0.5 μm 2) have an f T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 kΩ/sq. and an open-base breakdown voltage BV CEO of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f T at small lateral dimensions.
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
J. Dunn, D.L. Harame, et al.
CICC 2006
J.-S. Rieh, D.R. Greenberg, et al.
RFIC 2004
Zhen Zhang, F. Pagette, et al.
VLSI-TSA 2010