DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
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119 results for Stephan A. Cohen
Diffusion of phosphorus during rapid thermal annealing of ion-implanted silicon
- G.S. Oehrlein
- S. Cohen
- et al.
- 1984
- Applied Physics Letters
Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- Z.A. Weinberg
- D.R. Young
- et al.
- 1984
- Applied Physics Letters
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- VLSI Science and Technology 1983
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.
- C.M. Ransom
- T.O. Sedgwick
- et al.
- 1983
- ECS Meeting 1983
NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.
- S. Cohen
- T.O. Sedgwick
- et al.
- 1983
- MRS Proceedings 1983
Investigation of the silicon beading phenomena during zone-melting recrystallization
- Z.A. Weinberg
- V.R. Deline
- et al.
- 1983
- Applied Physics Letters
Ovulation Detection by Monitoring Temperature During Sleep
- Z.A. Weinberg
- S. Cohen
- 1983
- IEEE T-BME