Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- IEDM 1996
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7 results for D.A. Sunderland
A High-Density 6.9 sq. pm Embedded SRAM Cell in a High-Performance 0.25 μm-Generation CMOS Logic Technology
- S. Subbanna
- P. Agnello
- et al.
- 1996
- IEDM 1996
A Si-Ge HBT technology for the wireless marketplace
- D. Ahlgren
- D.A. Sunderland
- et al.
- 1996
- ESSDERC 1996
Phase edge lithography for sub 0.1 μm electrical channel length in a 200 MM full CMOS process
- P. Agnello
- T. Newman
- et al.
- 1995
- VLSI Technology 1995
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications
- D. Nguyen-Ngoc
- D.A. Sunderland
- et al.
- 1996
- Applied Surface Science
Si-Ge heterojunction bipolar technology for high-speed integrated circuits
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- Canadian Journal of Physics