E. Burstein
Ferroelectrics
Early production results are reviewed for IBMs integrated SiGe HBT Technology. With a sample size of over 200 wafers, statistical contol of key HBT parameters (FT,F-, Rbb, h i,p) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirements for the high performance wireless communicationsmarketplace.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals