90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004
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60 results for Andrew Simon
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL
- D. Edelstein
- H.S. Rathore
- et al.
- 2004
- IRPS 2004
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
- C.-K. Hu
- D. Canaperi
- et al.
- 2004
- IRPS 2004
A study of electromigration lifetime for Cu interconnects coated with CoWP, Ta/TaN, or SiC xN yH z
- C.-K. Hu
- D. Canaperi
- et al.
- 2003
- AMC 2003
A 90nm dual damascene hybrid (organic / inorganic) low-k - Copper BEOL integration scheme
- T. Dalton
- A. Cowley
- et al.
- 2003
- ADMETA 2003
An optimal liner for copper damascene interconnects
- D. Edelstein
- C. Uzoh
- et al.
- 2001
- ADMETA 2001
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000
Copper dual damascene wiring for sub-0.25 μm CMOS technology
- J. Heidenreich
- D. Edelstein
- et al.
- 1998
- IITC 1998