Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics
Publications
199 results for Vijay Narayanan
Aggressive SiGe channel gate stack scaling by remote Oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Solid State Letters
Aggressive sige channel gate stack scaling by remote oxygen scavenging: Gate-first pFET performance and reliability
- Martin M. Frank
- Eduard A. Cartier
- et al.
- 2012
- ECS Meeting 2012
Bias temperature instability in high-κ/metal gate transistors - Gate stack scaling trends
- Siddarth Krishnan
- Vijay Narayanan
- et al.
- 2012
- IRPS 2012
High performance bulk planar 20nm CMOS technology for low power mobile applications
- Huiling Shang
- Sameer Jain
- et al.
- 2012
- VLSI Technology 2012
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
- U. Kwon
- K. Wong
- et al.
- 2012
- VLSI Technology 2012
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
New layout dependency in high-k/metal gate MOSFETs
- M. Hamaguchi
- Deleep R. Nair
- et al.
- 2011
- IEDM 2011
Fundamental aspects of HfO 2-based high-k metal gate stack reliability and implications on t inv-scaling
- E. Cartier
- Andreas Kerber
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011