Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters
Publications
200 results for Vijay Narayanan
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Fundamental understanding and optimization of PBTI in nFETs with SiO 2/HfO2 gate stack
- E. Cartier
- B.P. Linder
- et al.
- 2006
- IEDM 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
Charge defects, Vt shifts, and the solution to the high-k metal gate n-MOSFET problem
- Supratik Guha
- Vijay Narayanan
- et al.
- 2006
- Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
- Evgeni P. Gusev
- Vijay Narayanan
- et al.
- 2006
- IBM J. Res. Dev
Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO2/metal stacks
- V. Narayanan
- K. Maitra
- et al.
- 2006
- IEEE Electron Device Letters
Transistor scaling with novel materials
- Meikei Ieong
- Vijay Narayanan
- et al.
- 2006
- Materials Today
High performance FDSOI CMOS technology with metal gate and high-k
- Bruce Doris
- Y.-H. Kim
- et al.
- 2005
- VLSI Technology 2005