Development of spatial nearest-neighbor analysis and Clustering/Gibbs statistical methodology for filament percolation in dielectric breakdown and forming process in ReRAM devices
- Ernest Y Wu
- Franco Stellari
- et al.
- 2021
- IEDM 2021
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6 results for Ernest Y Wu
Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processes
- Ernest Y Wu
- Takashi Ando
- et al.
- 2023
- IEDM 2023
Systematic multiple filament statistical methodology using a successive varying-voltage technique for series resistance effect in post-breakdown (forming) characterization
- Ernest Y Wu
- Baozhen Li
- et al.
- 2022
- IEDM 2022
Current Understanding and Future Challenges of Gate Dielectric Breakdown Reliability
- Ernest Y Wu
- 2024
- IEDM 2024
Challenges of gate stack TDDB in gate-allaround nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024
Challenges of gate stack TDDB in gate-all-around nanosheet towards further scaling
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2024
- IRPS 2024