The Extreme Extendibility of Cu and Post-Cu Dual Damascene BEOL Interconnect Technology
- Daniel Edelstein
- Son Nguyen
- et al.
- 2024
- IEDM 2024
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143 results for Daniel Edelstein
Backside power distribution for nanosheet technologies beyond 2nm
- Ruilong Xie
- Wonhyuk Hong
- et al.
- 2024
- VLSI Technology and Circuits 2024
Reliability and resistance projections for rhodium and iridium interconnects from first-principles
- Nicholas A. Lanzillo
- Daniel C. Edelstein
- 2022
- Journal of Vacuum Science and Technology B
Metal-induced line width variability challenge and mitigation strategy in advanced post-Cu interconnects
- Koichi Motoyama
- Nicholas A. Lanzillo
- et al.
- 2022
- IITC 2022
Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects
- Takeshi Nogami
- Oleg Gluschenkov
- et al.
- 2022
- VLSI Technology and Circuits 2022
Scatterometry based methodologies for characterization of MRAM technology
- Manasa Medikonda
- Daniel Schmidt
- et al.
- 2022
- SPIE Advanced Lithography 2022
First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications
- H. Wu
- V. Katragadda
- et al.
- 2021
- IEDM 2021
Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect
- T. Nogami
- S. Nguyen
- et al.
- 2021
- IEDM 2021
Dual Damascene BEOL Extendibility With Cu Reflow / Selective TaN And Co/Cu Composite
- P. Bhosale
- N. Lanzillo
- et al.
- 2021
- VLSI Technology 2021
A 14 nm embedded STT-MRAM CMOS technology
- Daniel C. Edelstein
- M. Rizzolo
- et al.
- 2020
- IEDM 2020