Directed self-assembly of ge quantum dots using focused Si2+ ion beam patterning
- See Wee Chee
- Martin Kammler
- et al.
- 2018
- Scientific Reports
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13 results for Martin Kammler
In-situ observations of self-assembled island nucleation on patterned substrates
- F.M. Ross
- M. Kammler
- et al.
- 2004
- Philosophical Magazine
Precision placement of heteroepitaxial semiconductor quantum dots
- R. Hull
- J. Gray
- et al.
- 2003
- Materials Science and Engineering: B
In-situ focused ion beam micropatterning of Ge islands
- M. Kammler
- R. Hull
- et al.
- 2003
- Microscopy and Microanalysis
Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au
- See Wee Chee
- Martin Kammler
- et al.
- 2013
- Ultramicroscopy
Growth of nanostructures by locally modified surface reactivity
- A. Portavoce
- M. Kammler
- et al.
- 2009
- Materials Science in Semiconductor Processing
Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces
- A. Portavoce
- M. Kammler
- et al.
- 2006
- Nanotechnology
Controlled nucleation of dislocations by a spatially localized stress field
- M. Kammler
- D. Chidambarrao
- et al.
- 2005
- Applied Physics Letters
Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface
- Th. Schmidt
- R. Kröger
- et al.
- 2005
- Applied Physics Letters
Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)
- A. Portavoce
- M. Kammler
- et al.
- 2004
- Physical Review B - CMMP