X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS
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79 results for Jin Cai
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI
- Tianbing Chen
- Akil K. Sutton
- et al.
- 2005
- IEEE TNS
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Off-state current and performance analysis for double-gate CMOS with non-self-aligned back gate
- Keunwoo Kim
- Hussein I. Hanafi
- et al.
- 2005
- IEEE Transactions on Electron Devices
Reverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices
Comparison of large-scale layer-relaxation simulations with experiment
- K.W. Schwarz
- J. Cai
- et al.
- 2004
- Applied Physics Letters
Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
Compact modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- International Journal of Electronics
Gate tunneling currents in ultrathin oxide metal-oxide-silicon transistors
- Jin Cai
- Chih-Tang Sah
- 2001
- Journal of Applied Physics